smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD992-Z features low v ce(sat) . absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v collector current (dc) i c 2a collector current (pulse) * i cp 3a total power dissipation p t 2w junction temperature t j 150 storage temperature t stg -55to+150 * pulse test pw 10ms, duty cycle 50%. h fe classification marking n m l k hfe 35 80 60 120 80 120 100 200 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =20v,i e = 0 10 na v ce =0.5v,i c = 0.1 a 35 200 v ce =0.5v,i c =2.0a 50 collector saturation voltage * v ce(sat) i c =2.0a,i b =40ma 0.3 0.5 v base saturation voltage * v be(sat) i c =2.0a,i b = 40 ma 0.95 1.5 v * pulsed: pw 350 s, duty cycle 2% dc current gain * h fe smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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